PFC circuit ideal for various power supply devices to significantly improve efficiency during operation
ROHM, a leading global semiconductor manufacturer, has developed the 3rd generation SiC (Silicon Carbide)
Schottky Barrier Diode (hereinafter referred to as SiC-SBD) SCS3 series, which is ideal for power supply PFC
circuits*1 such as servers and high-end computers.
The new structure inherits the industry's lowest forward voltage*2 (VF=1.35V, 25°C) achieved by the
second-generation SiC-SBD in mass production, and also ensures high inrush current resistance. As a result, it can
also be used in power supply PFC circuits for servers and high-end computers, etc., and is very helpful in improving
the efficiency of applications.
This product has been sold as a sample since March 2016, and is scheduled to be gradually put into mass
production starting in April 2016. The production base for the pre-process is ROHM Apollo Co., Ltd.
(Fukuoka Prefecture, Japan) and the production base for the post-process is ROHM Korea Corporation (Korea).
ROHM will continue to contribute to the energy saving of power electronics by expanding its lineup of SiC
components.
<Background
In recent years, higher efficiency power components have been highly anticipated in power electronics fields such
as solar power generation systems, various power supply devices for industrial use, electric vehicles, and home
appliances in order to improve power conversion efficiency and achieve further energy savings. In particular,
SiC-SBD products are being used in PFC circuits to improve device efficiency due to their fast recovery
characteristics, which are effective in improving efficiency in equipment power supplies that require higher power
efficiency, such as servers. In these applications, the anti-surge current*3 characteristic becomes an important
parameter. ROHM's 1st and 2nd generation SiC-SBD products have been well received by customers. To further
expand the range of applications, ROHM has successfully developed a product that maintains the industry's
highest level of low VF characteristics and achieves high anti-surge current characteristics using a new product
structure.
<Features> 1.
1. High inrush current resistance with low VF characteristics
The 3rd generation SiC-SBDSCS3 series has been developed with a JBS (Junction Barrier Schottky) structure to
achieve high inrush current resistance. While the previous structure was effective in improving inrush current
resistance and leakage characteristics, ROHM's latest 3rd generation product not only has the characteristics of the
previous product, but also further improves the low VF characteristics achieved in the 2nd generation SiC-SBD, and
is poised to make its mark as an even higher performance product.